Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors
نویسندگان
چکیده
منابع مشابه
Spin transport through GaAs/GaMnAs/GaAs
This work addresses spin-dependent transport in the heterostructure p-GaAs/GaMnAs/p-GaAs. The diluted ferromagnetic semiconductor GaMnAs layer behaves, within mean field approximation, as a potential well for spin-down carriers and a potential barrier for spin-up ones. Thus the transport would be spin-dependent. The goal of this work is to devise spin filters relevant for spin-dependent optoele...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2007
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2724771